high speed, high gain bipolar npn power transistor with integrated collector-emitter diode and built-in efficient antisaturation network the mje18002d2 use a newly developed technology, so called h2bip*, to design the state of art transistor dedicated to the electronic light ballast and pfc** circuit. the main advantages brought by these new transistors are: ? improved global efficiency due to the low base drive requirements ? dc current gain typically centered at 45 ? extremely low storage time variation, thanks to the antisaturation network ? easy to use thanks to the integrated collector/emitter diode the on semiconductor six sigma philosophy provides tight and reproductible parameter distribution. * high speed high gain bipolar transistor ** power factor control ????????????????????????????????? ????????????????????????????????? maximum ratings ????????????????? ????????????????? rating ??????? ??????? symbol ???????? ???????? value ???? ???? unit ????????????????? ????????????????? collectoremitter sustaining voltage ??????? ??????? v ceo ???????? ???????? 450 ???? ???? vdc ????????????????? ????????????????? collectorbase breakdown voltage ??????? ??????? v cbo ???????? ???????? 1000 ???? ???? vdc ????????????????? ????????????????? collectoremitter breakdown voltage ??????? ??????? v ces ???????? ???????? 1000 ???? ???? vdc ????????????????? ????????????????? emitterbase voltage ??????? ??????? v ebo ???????? ???????? 12 ???? ???? vdc ????????????????? ? ??????????????? ? ????????????????? collector current e continuous e peak (1) ??????? ? ????? ? ??????? i c i cm ???????? ? ?????? ? ???????? 2 5 ???? ? ?? ? ???? adc ????????????????? ????????????????? base current e continuous base current e peak (1) ??????? ??????? i b i bm ???????? ???????? 1 2 ???? ???? adc ????????????????? ? ??????????????? ? ????????????????? *total device dissipation @ t c = 25 c *derate above 25 c ??????? ? ????? ? ??????? p d ???????? ? ?????? ? ???????? 50 0.4 ???? ? ?? ? ???? watt w/ c ????????????????? ????????????????? operating and storage temperature ??????? ??????? t j , t stg ???????? ???????? 65 to 150 ???? ???? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ????????????????? ? ??????????????? ? ????????????????? thermal resistance e junction to case thermal resistance e junction to ambient ??????? ? ????? ? ??????? r q jc r q ja ???????? ? ?????? ? ???????? 2.5 62.5 ???? ? ?? ? ???? c/w ????????????????? ? ??????????????? ? ????????????????? maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds ??????? ? ????? ? ??????? t l ???????? ? ?????? ? ???????? 260 ???? ? ?? ? ???? c (1) pulse test: pulse width = 5 ms, duty cycle 10%. on semiconductor ? semiconductor components industries, llc, 2001 april, 2001 rev. 2 1 publication order number: mje18002d2/d mje18002d2 power transistors 2 amperes 1000 volts 50 watts case 221a00 to220ab
mje18002d2 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (i c = 100 ma, l = 25 mh) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 450 ???? ? ?? ? ???? 570 ???? ? ?? ? ???? ??? ? ? ? ??? vdc ??????????????????? ??????????????????? collector cutoff current (v ce = rated v ceo , i b = 0) ????? ????? i ceo ??? ??? ???? ???? ???? ???? 100 ??? ??? m adc ??????????????? ? ????????????? ? ? ????????????? ? ??????????????? collector cutoff current (v ce = rated v ces , v eb = 0) collector cutoff current (v ce = 500 v, v eb = 0) ????? ? ??? ? ? ??? ? ????? @ t c = 25 c @ t c = 125 c @ t c = 125 c ????? ? ??? ? ? ??? ? ????? i ces ??? ? ? ? ? ? ? ??? ???? ? ?? ? ? ?? ? ???? ???? ? ?? ? ? ?? ? ???? 100 500 100 ??? ? ? ? ? ? ? ??? m adc ??????????????????? ??????????????????? emittercutoff current (v eb = 10 vdc, i c = 0) ????? ????? i ebo ??? ??? ???? ???? ???? ???? 100 ??? ??? m adc ????????????????????????????????? ????????????????????????????????? on characteristics ??????????????? ? ????????????? ? ? ????????????? ? ??????????????? baseemitter saturation voltage (i c = 0.4 adc, i b = 40 madc) (i c = 1 adc, i b = 0.2 adc) ????? ? ??? ? ? ??? ? ????? @ t c = 25 c @ t c = 25 c ????? ? ??? ? ? ??? ? ????? v be(sat) ??? ? ? ? ? ? ? ??? ???? ? ?? ? ? ?? ? ???? 0.78 0.87 ???? ? ?? ? ? ?? ? ???? 1 1.1 ??? ? ? ? ? ? ? ??? vdc ??????????????? ? ????????????? ? ??????????????? collectoremitter saturation voltage (i c = 0.4 adc, i b = 40 madc) ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? ???? ? ?? ? ???? 0.36 0.5 ???? ? ?? ? ???? 0.6 1 ??? ? ? ? ??? vdc ??????????????? ? ????????????? ? ??????????????? (i c = 1 adc, i b = 0.2 adc) ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ????? ? ??? ? ????? ??? ? ? ? ??? ???? ? ?? ? ???? 0.4 0.65 ???? ? ?? ? ???? 0.75 1.2 ??? ? ? ? ??? ??????????????? ? ????????????? ? ??????????????? dc current gain (i c = 0.4 adc, v ce = 1 vdc) ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ????? ? ??? ? ????? h fe ??? ? ? ? ??? 14 8 ???? ? ?? ? ???? 25 15 ???? ? ?? ? ???? ??? ? ? ? ??? e ??????????????? ? ????????????? ? ??????????????? (i c = 1 adc, v ce = 1 vdc) ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ????? ? ??? ? ????? ??? ? ? ? ??? 6 4 ???? ? ?? ? ???? 10 6 ???? ? ?? ? ???? ??? ? ? ? ??? ????????????????????????????????? dynamic characteristics ??????????????????? ? ????????????????? ? ??????????????????? current gain bandwidth (i c = 0.5 adc, v ce = 10 vdc, f = 1 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? ???? ? ?? ? ???? 13 ???? ? ?? ? ???? ??? ? ? ? ??? mhz ??????????????????? ? ????????????????? ? ??????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 1 mhz) ????? ? ??? ? ????? c ob ??? ? ? ? ??? ???? ? ?? ? ???? 50 ???? ? ?? ? ???? 100 ??? ? ? ? ??? pf ??????????????????? ? ????????????????? ? ??????????????????? input capacitance (v eb = 8 vdc) ????? ? ??? ? ????? c ib ??? ? ? ? ??? ???? ? ?? ? ???? 340 ???? ? ?? ? ???? 500 ??? ? ? ? ??? pf ????????????????????????????????? ????????????????????????????????? diode characteristics ??????????????? ? ????????????? ? ??????????????? forward diode voltage (i ec = 1 adc) ????? ? ??? ? ????? @ t c = 25 c ????? ? ??? ? ????? v ec ??? ? ? ? ??? ???? ? ?? ? ???? 1.2 ???? ? ?? ? ???? 1.5 ??? ? ? ? ??? v ??????????????? ? ????????????? ? ??????????????? (i ec = 0.2 adc) ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ????? ? ??? ? ????? ??? ? ? ? ??? ???? ? ?? ? ???? 0.9 0.6 ???? ? ?? ? ???? 1.2 ??? ? ? ? ??? ??????????????? ??????????????? (i ec = 0.4 adc) ????? ????? @ t c = 25 c @ t c = 125 c ????? ????? ??? ??? ???? ???? 1 0.6 ???? ???? 1.3 ??? ??? ??????????????? ? ????????????? ? ??????????????? forward recovery time (i f = 0.2 adc, di/dt = 10 a/ m s) ????? ? ??? ? ????? @ t c = 25 c ????? ? ??? ? ????? t fr ??? ? ? ? ??? ???? ? ?? ? ???? 540 ???? ? ?? ? ???? ??? ? ? ? ??? ns ??????????????? ??????????????? (i f = 0.4 adc, di/dt = 10 a/ m s) ????? ????? @ t c = 25 c ????? ????? ??? ??? ???? ???? 517 ???? ???? ??? ??? ??????????????? ??????????????? (i f = 1 adc, di/dt = 10 a/ m s) ????? ????? @ t c = 25 c ????? ????? ??? ??? ???? ???? 480 ???? ???? ??? ???
mje18002d2 http://onsemi.com 3 electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ???? ???? symbol ???? ???? min ???? ???? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? switching characteristics: resistive load (d.c. 10%, pulse width = 20 m s) ???????? ? ?????? ? ???????? turnon time ???????? ? ?????? ? ???????? i c = 1 adc, i b1 = 0.2 adc i b2 =05adc ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t on ???? ? ?? ? ???? ???? ? ?? ? ???? 100 94 ???? ? ?? ? ???? 150 ??? ? ? ? ??? ns ???????? ???????? turnoff time ???????? ???????? i b2 = 0.5 adc v cc = 300 vdc ????? ????? @ t c = 25 c @ t c = 125 c ???? ???? t off ???? ???? 0.95 ???? ???? 1.5 ???? ???? 1.25 ??? ??? m s ????????????????????????????????? ????????????????????????????????? switching characteristics: inductive load (v clamp = 300 v, v cc = 15 v, l = 200 m h) ???????? ? ?????? ? ???????? fall time ???????? ? ?????? ? ???????? ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t f ???? ? ?? ? ???? ???? ? ?? ? ???? 130 120 ???? ? ?? ? ???? 175 ??? ? ? ? ??? ns ???????? ? ?????? ? ???????? storage time ???????? ? ?????? ? ???????? i c = 0.4 adc i b1 = 40 madc i b2 = 0 .2 a dc ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t s ???? ? ?? ? ???? ???? ? ?? ? ???? 0.55 0.7 ???? ? ?? ? ???? 0.65 ??? ? ? ? ??? m s ???????? ???????? crossover time ???????? ???????? i b2 = 0 . 2 adc ????? ????? @ t c = 25 c @ t c = 125 c ???? ???? t c ???? ???? ???? ???? 110 100 ???? ???? 175 ??? ??? ns ???????? ? ?????? ? ???????? fall time ???????? ? ?????? ? ???????? ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t f ???? ? ?? ? ???? ???? ? ?? ? ???? 130 140 ???? ? ?? ? ???? 175 ??? ? ? ? ??? ns ???????? ? ?????? ? ???????? storage time ???????? ? ?????? ? ???????? i c = 0.8 adc i b1 = 160 madc i b2 = 1 60 ma dc ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t s ???? ? ?? ? ???? 2.1 ???? ? ?? ? ???? 3 ???? ? ?? ? ???? 2.4 ??? ? ? ? ??? m s ???????? ???????? crossover time ???????? ???????? i b2 = 160 madc ????? ????? @ t c = 25 c @ t c = 125 c ???? ???? t c ???? ???? ???? ???? 275 350 ???? ???? 350 ??? ??? ns ???????? ? ?????? ? ???????? fall time ???????? ? ?????? ? ???????? ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t f ???? ? ?? ? ???? ???? ? ?? ? ???? 100 100 ???? ? ?? ? ???? 150 ??? ? ? ? ??? ns ???????? ? ?????? ? ???????? storage time ???????? ? ?????? ? ???????? i c = 1 adc i b1 = 0.2 adc i b2 = 0 . 5 a dc ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t s ???? ? ?? ? ???? ???? ? ?? ? ???? 1.05 1.45 ???? ? ?? ? ???? 1.2 ??? ? ? ? ??? m s ???????? ? ?????? ? ???????? crossover time ???????? ? ?????? ? ???????? i b2 = 0 . 5 adc ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t c ???? ? ?? ? ???? ???? ? ?? ? ???? 100 115 ???? ? ?? ? ???? 150 ??? ? ? ? ??? ns ????????????????????????????????? dynamic saturation voltage ???????? ? ?????? ? ???????? dynamic saturation voltage: ????? ? ??? ? ????? i c = 0.4 adc i b1 =40ma ???? ? ?? ? ???? @ 1 m s ????? ? ??? ? ????? @ t c = 25 c ???? ? ?? ? ???? v ce(dsat) ???? ? ?? ? ???? ???? ? ?? ? ???? 7.4 ???? ? ?? ? ???? ??? ? ? ? ??? v ???????? ???????? v o lt age: determined 1 m s and 3 m s res p ectively ????? ????? i b1 = 40 ma v cc = 300 v ???? ???? @ 3 m s ????? ????? @ t c = 25 c ???? ???? ???? ???? ???? ???? 2.5 ???? ???? ??? ??? ???????? ???????? 3 m s respectively after rising i b1 reaches 90% of final ????? ????? i c = 1 adc i b1 =02a ???? ???? @ 1 m s ????? ????? @ t c = 25 c ???? ???? ???? ???? ???? ???? 11.7 ???? ???? ??? ??? ???????? ???????? reaches 90% of final i b1 ????? ????? i b1 = 0.2 a v cc = 300 v ???? ???? @ 3 m s ????? ????? @ t c = 25 c ???? ???? ???? ???? ???? ???? 1.3 ???? ???? ??? ???
mje18002d2 http://onsemi.com 4 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mje18002d2/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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